Oxygen‐based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide
نویسندگان
چکیده
منابع مشابه
Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy
The surface roughness of gallium arsenide ~001! films produced by metalorganic vapor-phase epitaxy has been studied as a function of temperature and growth rate by in situ scanning tunneling microscopy. Height–height correlation analysis reveals that the root-mean-height difference follows a power-law dependence on lateral separation, i.e., G(L)5kL, up to a critical distance Lc , after which it...
متن کاملSelective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon
The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 1C. A two-step growth method was used to deposit the GaAs films with an optimum nucleation temperature of 400 1C. Layers nucleated at 350 1C or below were found to be polycrystalline whereas those nucleate...
متن کاملPhotoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition
Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition
متن کاملStructure of arsenic-treated indium phosphide „001... surfaces during metalorganic vapor-phase epitaxy
We have studied the initial stages of heterojunction formation during the metalorganic vapor-phase epitaxy of indium arsenide on indium phosphide. Exposing an InP ~001! film to 10 mTorr of tertiarybutylarsine below 500 °C results in the deposition of a thin InAs layer from 1.5 to 5.0 atomic layers thick ~2.3–7.5 Å!. The surface of this epilayer remains atomically smooth independent of arsenic e...
متن کاملSynthesis of Gallium Nitride by Laser-Assisted MetalOrganic Vapor Phase Epitaxy
For the past two decades, gallium nitride (GaN) has become one of the most studied materials in the fields of optics and electronics due to its unique properties. Currently available methods for the synthesis of GaN require a high substrate temperature of 1100 o C, which can lead to several issues including a high defect concentration and increased probability of cracking and warping of films d...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1995
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.114979